Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Due to wavelength-selective characteristics, the InGaN-based photodetectors show bright prospects in visible light communication and fast imaging system. However, application of InGaN with simple structures is limited above field owing slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction prepared through a self-catalytic high (930 °C) low (400 temperature two-step growth method by molecular beam epitaxy (MBE). The performance analyzed semiconductor device analyzer, wavelength system (consists xenon lamp monochromator), time (combined optical chopper, laser, digital oscilloscope). present speed rise/full 18.2/24.7 µs. Further analyses reveal responsivity 9.27 A W−1 specific detectivity 3.54 × 1010 Jones under −1 V bias. As result, NRA exhibit great potential for photoelectric conversion systems provide valuable guidance realizing photodetectors.